Low startup time bandgap reference1/30/2024 ![]() ![]() Another disadvantage of BGR is the power consumption. However, due to the nonlinear temperature behavior of V BE, it is essential to use curvature compensation approaches to improve the precision of BGR. Ĭonventional voltage references are based on a bandgap reference (BGR) circuit, which is a weighted sum of V BE and thermal voltage. As the supply voltage of electronic systems continues to decrease with technology improvement, the requirements for a low-power voltage reference with nanoscale technology are critically increasing. Voltage reference is one of the core modules in electronic systems, which is widely used in medical electronics, power managements, wireless environmental sensors, and communication circuits. The line sensitivity is 1.8 mV/V, and the PSRR without any filtering capacitor at 100 Hz is 53 dB with a 2.28-nW power consumption. The generated reference voltage is 148 mV, with a TC of 28 ppm/☌ for the − 30 to 80 ☌ temperature range. Verification results with 65-nm CMOS technology demonstrate that the minimum supply voltage can be as low as 0.35 V with a 0.00182-mm 2 active area. Therefore, a temperature-stable voltage reference is achieved in the proposed compacted method with low power consumption and high PSRR. By injecting the generated current into a transistor with a different threshold voltage, a delta threshold voltage with a greatly reduced negative TC is realized and temperature-compensated by a generated positive TC item at the same time. A self-biased MOS voltage divider is proposed to provide bias current for whole voltage reference, which is a positive temperature coefficient (TC) current containing threshold voltage characteristics. In this paper, a nano-watt resistorless subthreshold voltage reference with high-power supply rejection ratio (PSRR) is presented.
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